Methods used in the fabrication of integrated circuitry
US10971500B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 6, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Jun 6, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/482
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method used in fabrication of integrated circuitry comprises forming metal material outwardly of a substrate. At least a majority (i.e., up to and including 100%) of the metal material contains ruthenium in at least one of elemental-form, metal compound-form, or alloy-form. A masking material is formed outwardly of the ruthenium-containing metal material. The masking material comprises at least one of nine specifically enumerated materials or category of materials. The masking material is used as a mask while etching through an exposed portion of the ruthenium-containing metal material to form a feature of integrated circuitry that comprises the ruthenium-containing metal material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.