Source contact structure of three-dimensional memory devices and fabrication methods thereof
US10971517B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 8, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Jul 23, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B41/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of three-dimensional (3D) memory devices having source contact structure in a memory stack are disclosed. The 3D memory device has a memory stack that includes a plurality of interleaved conductor layers and insulating layers extending over a substrate, a plurality of channel structures each extending vertically through the memory stack into the substrate, and a source contact structure extending vertically through the memory stack and extending laterally to separate the memory stack into a first portion and a second portion. The source contact structure may include a plurality of source contacts each electrically coupled to a common source of the plurality of channel structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.