Semiconductor device
US10971621B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 16, 2019 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Aug 16, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/256
Abstract
A semiconductor device includes a semiconductor body, first and second electrodes, and first and second control electrodes. The first and second electrodes are provided on the semiconductor body. The first and second control electrodes each include a first portion positioned between the semiconductor body and the first electrode, a second portion positioned between the semiconductor body and the second electrode, and a third portion linked to the first and second portions. The semiconductor body includes first to fourth semiconductor layers. The second semiconductor layer is provided on the first semiconductor layer, and extends along the first to third portions. The fourth semiconductor layer is provided selectively on the second semiconductor layer, and extends along the second and third portions. The fourth semiconductor layer includes second conductivity-type impurities with a higher concentration than a concentration of second conductivity-type impurities in the second semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.