Kohei Oasa
18Patents
2h-index
30Co-inventors
50Inventor score
Filing activity: Mar 17, 2014 → Oct 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US9917182B1 | Semiconductor device | Electricity | 3 | Active |
| US10651276B2 | Semiconductor device | Electricity | 2 | Active |
| US12183782B2 | Semiconductor device | Electricity | 1 | Active |
| US9627489B2 | Semiconductor device | Electricity | 1 | Active |
| US10707312B2 | Semiconductor device | Electricity | 1 | Active |
| US9337300B2 | Nitride-based semiconductor device | Electricity | 1 | Active |
| US10763352B2 | Semiconductor device | Electricity | 1 | Active |
| US11276775B2 | Semiconductor device | Electricity | 0 | Active |
| US10998437B2 | Semiconductor device | Electricity | 0 | Active |
| US10971621B2 | Semiconductor device | Electricity | 0 | Active |
| US9627504B2 | Semiconductor device | Electricity | 0 | Active |
| US11869970B2 | Semiconductor device including energy level in drift layer | Electricity | 0 | Active |
| US11810975B2 | Semiconductor device | Electricity | 0 | Active |
| US12183820B2 | Semiconductor device | Electricity | 0 | Active |
| US12255254B2 | Semiconductor device | Electricity | 0 | Active |
| US12283615B2 | Semiconductor device with multiple electrodes and an insulation film | Electricity | 0 | Active |
| US10593793B2 | Semiconductor device | Electricity | 0 | Active |
| US10074739B2 | Semiconductor device having electric field near drain electrode alleviated | Electricity | 0 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.