Method for manufacturing a data recording system utilizing heterogeneous magnetic tunnel junction types in a single chip
US10971681B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 5, 2018 |
| Grant date | Apr 6, 2021 |
| Priority date | — |
| Expiry date | Jul 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N50/10
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing an array of magnetic memory elements, wherein first memory element types are formed in a first region and second type of magnetic memory element types are formed in a second region. A shadow-mask is used during deposition to limit the deposition of at least one layer of memory element material to only the second region wherein the second memory element types are to be formed. The method can include depositing full film magnetic memory element layers over an entire substrate and then using the shadow-mask to deposit at least one performance altering material in the second memory element region. Alternatively, a first shadow-mask can be used to deposit a series of first memory element layers in a first region, and a second shadow-mask can be used to deposit a plurality of second memory element layers in a second region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.