Method for obtaining semiconducting carbon nanotube
US10974960B1 · kind B1 · utility
Assignees
Inventors
Key dates
| Filing date | Jun 24, 2020 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Jun 24, 2040 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S977/742
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for obtaining semiconducting carbon nanotubes is provided. An insulating substrate comprising hollow portions and non-hollow portions is provided. A plurality of electrodes is formed on a surface of the non-hollow portions. A plurality of carbon nanotubes is formed on a surface of the insulating substrate, and the carbon nanotubes stretches across the hollow portions. The insulating substrate, the plurality of electrodes, and the carbon nanotubes are placed into a cavity, and the cavity is evacuated. A voltage is applied between any two electrodes, and photos of carbon nanotubes suspended between the two electrodes are taken. In the photo, darker ones are the semiconducting carbon nanotubes, and brighter ones are metallic carbon nanotubes. Finally, the metallic carbon nanotubes are removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.