Patent · US Active

Variable-etch-depth gratings

US10976483B2 · kind B2 · utility

1Cited by
43References
25Claims
0Family size

Assignee

Inventors

Key dates

Filing dateFeb 24, 2020
Grant dateApr 13, 2021
Priority date
Expiry dateFeb 24, 2040

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG02B2027/0178
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

Disclosed herein are techniques for fabricating straight or slanted variable-etch-depth gratings. A photoresist material for fabricating a variable-etch-depth grating in a substrate is sensitive to light with a wavelength shorter than 300 nm and has an etch rate comparable to the etch rate of the substrate. A depth of an exposed portion of a photoresist material layer including the photoresist material correlates with the exposure dose. After exposure using a gray-scale mask and development, the photoresist material layer has a non-uniform thickness. The photoresist material layer with the non-uniform thickness and the underlying substrate are etched using a straight etching or slanted etching process to form the straight or slanted variable-etch-depth grating in the substrate. The variable-etch-depth grating is characterized by a non-uniform depth profile corresponding to the non-uniform thickness of the photoresist material layer before etching.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.