Method for detecting EUV pellicle rupture
US10976674B2 · kind B2 · utility
2Cited by
7References
20Claims
0Family size
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Key dates
| Filing date | Aug 14, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Aug 14, 2039 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2015/1486
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An extreme ultraviolet (EUV) lithography system includes an extreme ultraviolet (EUV) radiation source to emit EUV radiation, a collector for collecting the EUV radiation and focusing the EUV radiation, a reticle stage for supporting a reticle including a pellicle for exposure to the EUV radiation, and at least one sensor configured to detect particles generated due to breakage of the pellicle.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.