Patent · US Active

Transistor with adjustable rectifying transfer characteristic

US10978125B1 · kind B1 · utility

1Cited by

0References

21Claims

0Family size

Assignee

NAMLAB GGMBH · DE

Inventor

Halid Mulaosmanovic · Dresden, DE

Key dates

Filing date	Apr 21, 2020
Grant date	Apr 13, 2021
Priority date	—
Expiry date	Apr 21, 2040

Classification

Technology area (CPC H)Electricity
CPC primaryH04L27/12
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

An integrated circuit element includes a gate, a source, and a drain. In response to a selected drain voltage, a drain-current-to-gate-voltage transfer characteristic of the integrated circuit element to transition from an asymmetric, non-linear first transfer characteristic to a non-linear parabolic-shaped second transfer characteristic with an inflection point having a corresponding inflection point gate voltage value, where drain current values of the second transfer characteristic increase in magnitude as gate voltage values both increase and decrease from the inflection point gate voltage value such that the second transfer characteristic is a rectifying transfer characteristic.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.