Formation of stacked lateral semiconductor devices and the resulting structures
US10978297B1 · kind B1 · utility
4Cited by
3References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 24, 2018 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | May 24, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C17/06
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method of making stacked lateral semiconductor devices is disclosed. The method includes depositing a stack of alternating layers of different materials. Slots or holes are cut through the layers for subsequent formation of single crystal semiconductor fences or pillars. When each of the alternating layers of one material are removed space is provided for formation of single crystal semiconductor devices between the remaining layers. The devices are doped as the single crystal silicon is formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.