Aluminum-containing layers and methods of forming the same
US10978337B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 26, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Aug 26, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L23/5226
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Aluminum-containing layers and systems and methods for forming the same are provided. In an embodiment, a method includes depositing an aluminum-containing layer on a substrate in a chamber by atomic layer deposition. The depositing further includes contacting the substrate with an aluminum-containing precursor in a first pulse having a first peak pulse flow rate and a first pulse width; contacting the substrate with a nitrogen-containing precursor; contacting the substrate with the aluminum-containing precursor in a second pulse having a second peak pulse flow rate and a second pulse width; and contacting the substrate with the nitrogen-containing precursor. The first peak pulse flow rate is greater than the second peak pulse flow rate. The first pulse width is smaller than the second pulse width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.