Semiconductor device and method for fabricating the same
US10978556B2 · kind B2 · utility
1Cited by
2References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 20, 2019 |
| Grant date | Apr 13, 2021 |
| Priority date | — |
| Expiry date | Apr 7, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/691
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of first providing a substrate, forming a gate structure on the substrate, forming a hard mask on the substrate and the gate structure, patterning the hard mask to form trenches exposing part of the substrate, and forming raised epitaxial layers in the trenches. Preferably, the gate structure is extended along a first direction on the substrate and the raised epitaxial layers are elongated along a second direction adjacent to two sides of the gate structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.