Patent · US Active

Multi-conductor interconnect structure for a microelectronic device

US10980108B2 · kind B2 · utility

0Cited by

3References

22Claims

0Family size

Assignee

Intel Corporation · US

Inventors

Ping Ping Ooi · Butterworth, MY
Bok Eng Cheah · Air Itam, MY
Jackson Chung Peng Kong · Merang, MY
Kooi Chi Ooi · Air Itam, MY

Key dates

Filing date	Nov 22, 2017
Grant date	Apr 13, 2021
Priority date	—
Expiry date	Nov 22, 2037

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/181
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A multi-conductor interconnect for a microelectronic device incorporates multiple conductors and integrated shielding for the conductors. The multi-conductor interconnect includes first and second groups of conductors interleaved with one another within a dielectric structure. One of the groups of conductors may be coupled to a reference voltage node to provide shielding for the other group of conductors. The multi-conductor interconnect may further include a shield layer extending over some portion, or all, of the conductors of the first and second groups.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.