Plasma processing apparatus
US10984993B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 22, 2010 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Sep 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3441
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.