Patent · US Active

Deposition apparatus and physical vapor deposition chamber

US10984994B2 · kind B2 · utility

0Cited by

5References

20Claims

0Family size

Assignee

BEIJING NAURA MICROELECTRONICS EQUIPMENT CO., LTD. · CN

Inventors

Jun Zhang · Beijing, CN
Boyu DONG · Beijing, CN
Jinrong Zhao · Beijing, CN
Xuewei Wu · Beijing, CN
Bingliang GUO · Beijing, CN
Baogang Xu · Beijing, CN
Henan Zhang · Albany, US
Tong Wang · Beijing, CN
Shaohui Liu · Changchun, CN
Jun Wang · Nanhu, CN

Key dates

Filing date	Oct 9, 2016
Grant date	Apr 20, 2021
Priority date	—
Expiry date	Dec 14, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01J37/3426
WIPO fieldElectrical machinery, apparatus, energy
WIPO sectorElectrical engineering

Abstract

The present disclosure provides a deposition apparatus, including a first chamber, a second chamber and a third chamber. The first chamber is configured to load a substrate. The second chamber is configured to provide a high temperature environment in which a degas process and a sputtering process are performed on the substrate. The third chamber is provided between the first chamber and the second chamber. The third chamber is configured to transfer the substrate from the first chamber to the second chamber via the third chamber.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.