Structure and formation method of semiconductor device with resistive elements
US10985011B2 · kind B2 · utility
5Cited by
2References
20Claims
0Family size
Assignee
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Key dates
| Filing date | Jan 9, 2018 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Jan 9, 2038 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/47
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a semiconductor substrate and a first resistive element and a second resistive element over the semiconductor substrate. The semiconductor device structure also includes a first conductive feature electrically connected to the first resistive element and a second conductive feature electrically connected to the second resistive element. The semiconductor device structure further includes a dielectric layer surrounding the first conductive feature and the second conductive feature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.