Electrostatic chuck mechanism and semiconductor processing device having the same
US10985045B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 2018 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Jun 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH02N13/00
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electrostatic chuck mechanism and a semiconductor processing device having the same are provided. The electrostatic chuck mechanism includes a base, an edge assembly, a main electrostatic heating layer, and an edge electrostatic heating layer. The base includes a loading surface for loading a wafer and a step surface surrounding the loading surface and located at an edge portion of the wafer. The edge assembly includes a focus ring disposed above the step surface and surrounding the loading surface, and an insulation ring disposed at a bottom of the base and supporting the base. The main electrostatic heating layer, disposed above the loading surface, is configured to secure the wafer and adjust temperature of the wafer. The edge electrostatic heating layer, disposed above the step surface, is configured to secure the focus ring and adjust temperature of the focus ring.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.