Semiconductor device and method for fabricating the same
US10985048B2 · kind B2 · utility
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6References
11Claims
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Key dates
| Filing date | Jan 2, 2020 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Jan 2, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/795
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes the steps of: providing a substrate having a fin-shaped structure thereon; forming a single diffusion break (SDB) structure in the substrate to divide the fin-shaped structure into a first portion and a second portion; forming a first gate structure on the SDB structure; forming an interlayer dielectric (ILD) layer on the first gate structure; removing the first gate structure to form a first recess; and forming a dielectric layer in the first recess.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.