Preclean and dielectric deposition methodology for superconductor interconnect fabrication

US10985059B2 · kind B2 · utility

Assignee

• NORTHROP GRUMMAN SYSTEMS CORPORATION · US

Inventors

• Brian Wagner · Baltimore, US
• Christopher F. Kirby · Gambrills, US
• Michael Rennie · Mechanicsville, US
• James T. Kelliher · Elkridge, US
• Khyhouth Lim · Baltimore, US

Key dates

• Filing date: Nov 1, 2018
• Grant date: Apr 20, 2021
• Expiry date: Nov 1, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/02697
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A method is provided of forming a superconductor device interconnect structure. The method comprises forming a first dielectric layer overlying a substrate and forming a superconducting interconnect element in the first dielectric layer. The superconducting interconnect element includes a top surface aligned with a top surface of the first dielectric layer to form a first interconnect layer. The superconductor device interconnect structure is moved into a dielectric deposition chamber. The method further comprises performing a cleaning process on a top surface of the first interconnect layer in the dielectric deposition chamber to remove oxidization from a top surface of the first interconnect layer, and depositing a second dielectric layer over the first interconnect layer in the dielectric deposition chamber.