Gate oxide forming process
US10985071B1 · kind B1 · utility
4Cited by
4References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 30, 2019 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Oct 30, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A gate oxide forming process includes the following steps. A substrate including a first area and a second area is provided. A first oxide layer, a silicon containing cap layer and a second oxide layer on the substrate of the first area and the second area are sequentially and blanketly formed. The silicon containing cap layer and the second oxide layer in the first area are removed. An oxidation process is performed to oxidize the silicon containing cap layer and a gate oxide layer is formed in the second area.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.