Semiconductor device with nanowire contact and method for fabricating the same
US10985164B1 · kind B1 · utility
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4References
20Claims
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Assignee
Inventor
Key dates
| Filing date | Sep 27, 2019 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Sep 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/485
Abstract
The present application discloses a semiconductor device and a method for fabricating the semiconductor device. The semiconductor device includes a substrate having a plurality of doped regions; a plurality of silicide pads disposed respectively over the plurality of doped regions; and a plurality of conductive contacts disposed respectively over the plurality of silicide pads. The plurality of conductive contacts comprise a plurality of nanowires, a conductive liner disposed over the plurality of nanowires, and a conductor disposed over the conductive liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.