Semiconductor device and manufacturing method thereof
US10985180B2 · kind B2 · utility
1Cited by
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18Claims
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Key dates
| Filing date | Feb 27, 2020 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Feb 27, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/0483
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: hole source patterns; electron source patterns located between adjacent hole source patterns; a stack structure over the hole source patterns and the electron source patterns; and channel layers penetrating the stack structure, wherein each channel layer is in contact with a corresponding hole source pattern and an electron source pattern adjacent to the corresponding hole source pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.