Semiconductor device and production method thereof
US10985241B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 26, 2017 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Sep 26, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a semiconductor substrate, which includes an element region and an outer-periphery voltage withstanding region. The outer-periphery voltage withstanding region includes a plurality of p-type guard rings surrounding the element region in a multiple manner. Each of the guard rings includes a high concentration region and a low concentration region. A low concentration region of an outermost guard ring includes a first part positioned on an outer peripheral side of its high concentration region. Respective low concentration regions of the guard rings include respective second parts, each positioned in a range sandwiched between corresponding two adjacent high concentration regions among a plurality of concentration regions. A width of the first part on a front surface is wider than widths of the second parts on the front surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.