Method for preparing diamond-based field effect transistor, and corresponding field effect transistor
US10985258B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2017 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | Nov 6, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8303
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed are a preparation method for a diamond-based field effect transistor and a field effect transistor, relating to the technical field of semi-conductors. Said method comprising: forming a conductive layer on the upper surface of a diamond layer; the diamond layer being a high-resistance layer; manufacturing an active region mesa on the diamond layer; manufacturing, on the conductive layer, a source electrode on a first region corresponding to a source electrode region, and manufacturing, on the conductive layer, a drain electrode on a second region corresponding to a drain electrode region; depositing, on the conductive layer, a photocatalyst dielectric layer on the upper surface of a third region corresponding to a source and gate region, and depositing, on the conductive layer, the photocatalyst dielectric layer on the upper surface of a fourth region corresponding to a gate and drain region; illuminating the photocatalyst dielectric layer; depositing, on the conductive layer, a gate dielectric layer on a fifth region corresponding to gate electrode region, manufacturing a gate electrode on the upper surface of the gate dielectric layer. The present invention can reduce t…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.