Semiconductor device and method for fabricating the same
US10985264B2 · kind B2 · utility
7Cited by
5References
9Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 9, 2019 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | May 8, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/215
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating semiconductor device includes: forming a first semiconductor layer and an insulating layer on a substrate; removing the insulating layer and the first semiconductor layer to form openings; forming a second semiconductor layer in the openings; and patterning the second semiconductor layer, the insulating layer, and the first semiconductor layer to form fin-shaped structures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.