High-voltage lateral GaN-on-silicon schottky diode with reduced junction leakage current
US10985284B2 · kind B2 · utility
1Cited by
19References
30Claims
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Key dates
| Filing date | Jul 29, 2016 |
| Grant date | Apr 20, 2021 |
| Priority date | — |
| Expiry date | May 23, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/64
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
High-voltage, gallium-nitride Schottky diodes are described that are capable of withstanding reverse-bias voltages of up to and in excess of 2000 V with reverse current leakage as low as 0.4 microamp/millimeter. A Schottky diode may comprise a lateral geometry having an anode located between two cathodes, where the anode-to-cathode spacing can be less than about 20 microns. A diode may include at least one field plate connected to the anode that extends above and beyond the anode towards the cathodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.