Patent · US Active

Method for producing a stress-decoupled micromechanical pressure sensor

US10988377B2 · kind B2 · utility

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11Claims

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Assignee

Robert Bosch GmbH · DE

Inventors

Arne Dannenberg · Metzingen, DE
Torsten Kramer · Wannweil, DE
Joachim Fritz · Rötteln, DE
Thomas Friedrich · Bietigheim-Bissingen, DE

Key dates

Filing date	Sep 18, 2017
Grant date	Apr 27, 2021
Priority date	—
Expiry date	May 2, 2038

Classification

Technology area (CPC B)Performing Operations; Transporting
CPC primaryB81C2203/035
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

A method for producing a micromechanical pressure sensor. The method includes: providing a MEMS wafer having a silicon substrate and a first cavity developed therein underneath a sensor diaphragm; providing a second wafer; bonding the MEMS wafer to the second wafer; and exposing a sensor core from the rear side; a second cavity being formed in the process between the sensor core and the surface of the silicon substrate, and the second cavity being developed with the aid of an etching process which is carried out using etching parameters that are modified in a defined manner.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.