Tungsten post-CMP cleaning composition
US10988718B2 · kind B2 · utility
0Cited by
3References
17Claims
0Family size
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Key dates
| Filing date | Mar 9, 2017 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Jul 31, 2037 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A removal composition and process for cleaning post-chemical mechanical polishing (CMP) contaminants and particles from a microelectronic device having said particles and contaminants thereon. The removal compositions include at least one at least one organic additive; at least one metal chelating agent; and at least one polyelectrolyte. The composition achieves highly efficacious removal of the particles and CMP contaminant material from the surface of the microelectronic device without compromising the low-k dielectric, silicon nitride, and metal containing layers such as tungsten-containing layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.