Semiconductor device and method of manufacture
US10991618B2 · kind B2 · utility
2Cited by
1References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Sep 3, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1031
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a conductive line and a conductive via contacting the conductive line. A first dielectric material contacts a first sidewall surface of the conductive via. A second dielectric material contacts a second sidewall surface of the conductive via. The first dielectric material includes a first material composition, and the second dielectric material includes a second material composition different than the first material composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.