Structure of oxide thin film transistor

US10991827B2 · kind B2 · utility

Assignee

• TCL CHINA STAR OPTOELECTRONICS TECHNOLOGY CO., LTD. · CN

Inventors

• Yutong HU · Tangxia, CN
• Chihyuan Tseng · Tangxia, CN
• Chihyu Su · Tangxia, CN
• Wenhui Li · Nanhu, CN
• Xiaowen Lv · Nanhu, CN
• Longqiang Shi · Nanhu, CN
• Hejing Zhang · Tangxia, CN

Key dates

• Filing date: Mar 6, 2020
• Grant date: Apr 27, 2021
• Expiry date: Mar 6, 2040

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D99/00

Abstract

A structure of an oxide thin film transistor includes: an oxide semiconducting layer, an etching stopper layer on the oxide semiconducting layer, and a source and a drain on the etching stopper layer. Two vias are formed in the etching stopper layer. The oxide semiconducting layer includes two recesses formed therein to extend through a skin layer of the oxide semiconducting layer and respectively corresponding to the two vias. The two recesses are respectively connected with and in communication with the two vias. The source and the drain are respectively filled in the two vias and the two recesses connected with the two vias to directly connect to and physically contact the oxide semiconducting layer.