Group III nitride semiconductor light-emitting element and method of manufacturing same
US10991850B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 12, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Sep 12, 2039 |
Classification
- Technology area (CPC —)General
Abstract
A group III nitride semiconductor light-emitting element comprises, in the following order: an n-type group III nitride semiconductor layer; a group III nitride semiconductor laminated body obtained by alternately laminating a barrier layer and a well layer narrower in bandgap than the barrier layer in the stated order so that the number of barrier layers and the number of well layers are both N, where N is an integer; an AlN guide layer; and a p-type group III nitride semiconductor layer. The AlN guide layer has a thickness of 0.7 nm or more and 1.7 nm or less. An Nth well layer in the group III nitride semiconductor laminated body and the AlN guide layer are in contact with each other, or a final barrier layer is further provided between the Nth well layer and the AlN guide layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.