Multi-level phase change memory cells and method of making the same
US10991879B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 26, 2019 |
| Grant date | Apr 27, 2021 |
| Priority date | — |
| Expiry date | Jul 2, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
A phase change memory cell includes a first electrode, a second electrode located over the first electrode, a vertical pillar structure located between the first and second electrodes, the pillar structure containing a first phase change memory (PCM) material portion, a second PCM material portion and an intermediate electrode located between the first PCM material portion and the second PCM material portion, and a resistive liner containing a first segment electrically connected in parallel to the first PCM material portion between the first electrode and the intermediate electrode, and a second segment electrically connected in parallel to the second PCM material portion between the intermediate electrode and the second electrode. The first PCM material portion has a different electrical resistance than the second PCM material portion, and the first segment of the resistive liner has a different electrical resistance than the second segment of the resistive liner.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.