Inventor · San Jose, CA, US

Mac D. Apodaca

29Patents
5h-index
28Co-inventors
65Inventor score

Filing activity: Dec 31, 2001 → Jun 26, 2020

Most-cited inventions

PatentTitleAreaCited byStatus
US6885021B2 Adhesion layer for a polymer memory device and method therefor Electricity 17 Expired
US10147876B1 Phase change memory electrode with multiple thermal interfaces Electricity 11 Active
US9735151B1 3D cross-point memory device Electricity 6 Active
US10991879B2 Multi-level phase change memory cells and method of making the same Electricity 5 Active
US9837471B2 Dual OTS memory cell selection means and method Electricity 5 Active
US10290804B2 Nanoparticle-based resistive memory device and methods for manufacturing the same Electricity 5 Active
US10839897B1 Set/reset methods for crystallization improvement in phase change memories Physics 4 Active
US9490426B2 Multiple bit per cell dual-alloy GST memory elements Physics 3 Active
US9929214B2 Nano-imprinted self-aligned multi-level processing method Electricity 3 Active
US9876054B1 Thermal management of selector Electricity 3 Active
US10249682B2 Non-volatile memory system with serially connected non-volatile reversible resistance-switching memory cells Electricity 2 Active
US8455298B2 Method for forming self-aligned phase-change semiconductor diode memory Electricity 1 Active
US10217795B1 Memory cell for non-volatile memory system Electricity 1 Active
US10868245B1 Phase change memory device with crystallization template and method of making the same Electricity 1 Active
US10249680B2 Thermal management of selector Electricity 1 Active
US10217505B1 Chip with phase change memory and magnetoresistive random access memory Physics 1 Active
US11081174B2 Set/reset methods for crystallization improvement in phase change memories Physics 0 Active
US10127979B2 Memory cell located pulse generator Electricity 0 Active
US8786023B2 Embedded non-volatile memory Electricity 0 Active
US10381408B2 Method to fabricate discrete vertical transistors Physics 0 Active
US10283562B2 Process for fabricating three dimensional non-volatile memory system Electricity 0 Active
US10586794B2 3D cross-point memory manufacturing process having limited lithography steps Electricity 0 Active
US9812503B2 Embedded non-volatile memory Electricity 0 Active
US9812506B1 Nano-imprinted self-aligned multi-level processing method Electricity 0 Active
US10121782B2 3D cross-point memory manufacturing process having limited lithography steps Electricity 0 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.