Methods of determining scattering of radiation by structures of finite thicknesses on a patterning device
US10996565B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 13, 2018 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Feb 13, 2038 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG06F30/39
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method including: obtaining a characteristic of a portion of a design layout; determining a characteristic of M3D of a patterning device including or forming the portion; and training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and whose supervisory signal includes the characteristic of the M3D. Also disclosed is a method including: obtaining a characteristic of a portion of a design layout; obtaining a characteristic of a lithographic process that uses a patterning device including or forming the portion; determining a characteristic of a result of the lithographic process; training, by a computer, a neural network using training data including a sample whose feature vector includes the characteristic of the portion and the characteristic of the lithographic process, and whose supervisory signal includes the characteristic of the result.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.