Method of etch model calibration using optical scatterometry
US10997345B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 13, 2020 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Jan 13, 2040 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70625
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Computer-implemented methods of optimizing a process simulation model that predicts a result of a semiconductor device fabrication operation to process parameter values characterizing the semiconductor device fabrication operation are disclosed. The methods involve generating cost values using a computationally predicted result of the semiconductor device fabrication operation and a metrology result produced, at least in part, by performing the semiconductor device fabrication operation in a reaction chamber operating under a set of fixed process parameter values. The determination of the parameters of the process simulation model may employ pre-process profiles, via optimization of the resultant post-process profiles of the parameters against profile metrology results. Cost values for, e.g., optical scatterometry, scanning electron microscopy and transmission electron microscopy may be used to guide optimization.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.