Fin isolation structure for FinFET and method of forming the same
US10998239B2 · kind B2 · utility
0Cited by
12References
20Claims
0Family size
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Key dates
| Filing date | Jul 13, 2020 |
| Grant date | May 4, 2021 |
| Priority date | — |
| Expiry date | Jul 13, 2040 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device structure is provided. The semiconductor device structure includes a substrate having adjacent first and second fins protruding from the substrate. The semiconductor device structure also includes an insulating structure that includes a first insulating layer formed between and separating from the first fin and the second fin, a second insulating layer embedded in the first insulating layer, a first capping layer formed in the first insulating layer to cover a top surface of the second insulating layer, and a second capping layer in the first capping layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.