Semiconductor memory device

US10998328B2 · kind B2 · utility

Assignee

• TOSHIBA MEMORY CORPORATION · JP

Inventors

• Osamu Matsuura · Hiroshima, JP
• Satoshi Tatara · Kuwana, JP

Key dates

• Filing date: Mar 9, 2018
• Grant date: May 4, 2021
• Expiry date: Aug 7, 2038

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B43/50

Abstract

A semiconductor memory device includes a stacked body, a semiconductor member, and a first insulating member. Electrode films and insulating films are alternately stacked along a first direction in the stacked body. An end part of the stacked body is shaped like a staircase in which a terrace is formed for each of the electrode films. A portion of the electrode film placed in the end part is thicker than a portion of the electrode film placed in a central part of the stacked body. The semiconductor member extends in the first direction and penetrates through the central part of the stacked body. The first insulating member extends in the first direction and is provided in the end part.