Transferring nanostructures from wafers to transparent substrates
US11001535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 25, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Jun 25, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31749
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present disclosure generally relate to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A substrate, such as a silicon wafer, is provided as a base for forming an optical device. A transparent layer is disposed on a first surface of the substrate, and a structure layer is disposed on the transparent surface. An etch mask layer is disposed on a second surface of the substrate opposite the first surface, and a window or opening is formed in the etch mask layer to expose a portion of the second surface of the substrate. A plurality of nanostructures is then formed in the structure layer, and a portion of the substrate extending from the window to the transparent layer is removed. A portion of the transparent layer having nanostructures disposed thereon is then detached from the substrate to form an optical device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.