Method for making semimetal compound of Pt
US11001937B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 13, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Nov 10, 2039 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC01P2004/60
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe2. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour and keeping for 24 hours to 100 hours to obtain a crystal material of PtSe2; and separating the excessive reacting materials from the crystal material of PtSe2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.