Method for forming semiconductor structure
US11003082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jul 5, 2018 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Jan 31, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/024
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for forming a semiconductor device structure is provided. The method includes forming a material layer over a substrate and providing a resist solution. The resist solution includes a plurality of first polymers and a plurality of second polymers, each of the first polymers includes a first polymer backbone, and a first acid-labile group (ALG) with a first activation energy bonded to the first polymer backbone. Each of the second polymers includes a second polymer backbone, and a second acid-labile group with a second activation energy bonded to the second polymer backbone, the second activation energy is greater than the first activation energy. The method includes forming a resist layer over the material layer, and the resist layer includes a top portion and a bottom portion, and the first polymers diffuse to the bottom portion, and the second polymers diffuse to the top portion.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.