Method of manufacturing semiconductor device
US11004732B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 27, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Jun 27, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0179
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device includes forming first and second pattern structures on first and second regions of a substrate, respectively; forming a preparatory first interlayer insulating layer covering the first pattern structure on the first region; forming a preparatory second interlayer insulating layer covering the second pattern structure on the second region, the preparatory second interlayer insulating layer including first colloid; and converting the preparatory first and second interlayer insulating layers into first and second interlayer insulating layers, respectively, by annealing the preparatory first and second interlayer insulating layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.