Semiconductor device
US11004815B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Aug 21, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Aug 21, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/668
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device may include a semiconductor substrate, an insulator film provided directly or indirectly on the semiconductor substrate, a main electrode for power provided on the insulator film, a pad for signal provided on the insulator film. The insulator film may include a cell region where the main electrode is provided and a pad region where the pad is provided. The cell region and the pad region of the insulator film each may include a contact hole. A height position of the contact hole located within the pad region may be higher than a height position of the contact hole located within the cell region. A width of the contact hole located within the pad region may be greater than a width of the contact hole located within the cell region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.