System and method of fabricating ESD FinFET with improved metal landing in the drain
US11004842B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 21, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Nov 11, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/834
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A mandrel is formed over an active region that includes a first region and a second region. The first region and the second region are reserved for the formation of a source and a drain of a FinFET, respectively. A portion of the mandrel formed over the second region is broken up into a first segment and a second segment separated from the first segment by a gap. Spacers are formed on opposite sides of the mandrel. Using the spacers, fins are defined. The fins protrude upwardly out of the active region. A portion of the second region corresponding to the gap has no fins formed thereover. The source is epitaxially grown on the fins in the first region. At least a portion of the drain is epitaxially grown on the portion of the second region having no fins.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.