Photodiodes integrated into a BiCMOS process
US11004878B2 · kind B2 · utility
4Cited by
9References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 19, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Aug 19, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Structures including a photodiode and methods of fabricating such structures. A substrate has a top surface, a well, and a trench extending from the top surface to the well. A photodiode is positioned in the trench. The photodiode includes an electrode that is provided by a first portion of the well. A bipolar junction transistor has an emitter that is positioned over the top surface of the substrate and a subcollector that is positioned below the top surface of the substrate. The subcollector is provided by a second portion of the well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.