Inventor · Williston, VT, US

Vibhor Jain

174Patents
8h-index
94Co-inventors
79Inventor score

Filing activity: Oct 26, 2012 → May 14, 2024

Most-cited inventions

PatentTitleAreaCited byStatus
US9324846B1 Field plate in heterojunction bipolar transistor with improved break-down voltage Electricity 490 Active
US9368608B1 Heterojunction bipolar transistor with improved performance and breakdown voltage Electricity 20 Active
US9245951B1 Profile control over a collector of a bipolar junction transistor Electricity 17 Active
US10197730B1 Optical through silicon via Physics 12 Active
US9159817B2 Heterojunction bipolar transistors with an airgap between the extrinsic base and collector Electricity 12 Active
US9606291B2 Multilevel waveguide structure Physics 11 Active
US10388728B1 Structures with an airgap and methods of forming such structures Electricity 9 Active
US9412736B2 Embedding semiconductor devices in silicon-on-insulator wafers connected using through silicon vias Electricity 8 Active
US9722057B2 Bipolar junction transistors with a buried dielectric region in the active device region Electricity 8 Active
US10509244B1 Optical switches and routers operated by phase-changing materials controlled by heaters Physics 8 Active
US9029229B2 Semiconductor device and method of forming the device by forming monocrystalline semiconductor layers on a dielectric layer over isolation regions Electricity 8 Active
US10014397B1 Bipolar junction transistors with a combined vertical-lateral architecture Electricity 6 Active
US10038063B2 Tunable breakdown voltage RF FET devices Electricity 6 Active
US9070734B2 Heterojunction bipolar transistors with reduced parasitic capacitance Electricity 6 Active
US10367083B2 Compact device structures for a bipolar junction transistor Electricity 5 Active
US9825157B1 Heterojunction bipolar transistor with stress component Electricity 5 Active
US9847408B1 Fabrication of integrated circuit structures for bipolor transistors Electricity 5 Active
US9608096B1 Implementing stress in a bipolar junction transistor Electricity 5 Active
US11004878B2 Photodiodes integrated into a BiCMOS process Electricity 4 Active
US8810005B1 Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region Electricity 4 Active
US10777668B2 Bipolar junction transistors with a self-aligned emitter and base Electricity 4 Active
US8946861B2 Bipolar device having a monocrystalline semiconductor intrinsic base to extrinsic base link-up region Emerging Cross-Sectional Technologies 4 Active
US11171095B1 Active attack prevention for secure integrated circuits using latchup sensitive diode circuit Electricity 3 Active
US11016055B2 Sensors with a front-end-of-line solution-receiving cavity Electricity 3 Active
US11121097B1 Active x-ray attack prevention device Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.