Forming semiconductor structures with two-dimensional materials
US11004965B2 · kind B2 · utility
4Cited by
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20Claims
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Key dates
| Filing date | Sep 17, 2019 |
| Grant date | May 11, 2021 |
| Priority date | — |
| Expiry date | Sep 17, 2039 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/82
Abstract
A process is provided to fabricate a finFET device having a semiconductor layer of a two-dimensional “2D” semiconductor material. The semiconductor layer of the 2D semiconductor material is a thin film layer formed over a dielectric fin-shaped structure. The 2D semiconductor layer extends over at least three surfaces of the dielectric fin structure, e.g., the upper surface and two sidewall surfaces. A vertical protrusion metal structure, referred to as “metal fin structure”, is formed about an edge of the dielectric fin structure and is used as a seed to grow the 2D semiconductor material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.