Method for producing an optoelectronic semiconductor chip and optoelectronic semiconductor chip

US11005003B2 · kind B2 · utility

Assignee

• Osram OLED GMBH · DE

Inventors

• Werner Bergbauer · Windberg, DE
• Thomas Lehnhardt · Regensburg, DE
• Jürgen Off · Regensburg, DE
• Joachim Hertkorn · Neukirchen, DE

Key dates

• Filing date: Apr 15, 2019
• Grant date: May 11, 2021
• Expiry date: Apr 15, 2039

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/036
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A semiconductor chip and a method for producing a semiconductor chip are disclosed. In an embodiment an electronic semiconductor chip includes a growth substrate with a growth surface, which is formed by a planar region having a plurality of three-dimensional surface structures on the planar region, a nucleation layer composed of oxygen-containing AlN directly disposed on the growth surface and a nitride-based semiconductor layer sequence disposed on the nucleation layer, wherein the semiconductor layer sequence is selectively grown from the planar region such that a growth of the semiconductor layer sequence on surfaces of the three-dimensional surface structures is reduced or non-existent compared to a growth on the planar region, and wherein a selectivity of the growth of the semiconductor layer sequence on the planar region is targetedly adjusted by an oxygen content of the nucleation layer.