DC magnetron sputtering
US11008651B2 · kind B2 · utility
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9Claims
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Key dates
| Filing date | Apr 4, 2017 |
| Grant date | May 18, 2021 |
| Priority date | — |
| Expiry date | Apr 4, 2037 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3426
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A DC magnetron sputtering apparatus is for depositing a film on a substrate. The apparatus includes a chamber, a substrate support positioned within the chamber, a DC magnetron, and an electrical signal supply device for supplying an electrical bias signal that, in use, causes ions to bombard a substrate positioned on the substrate support. The substrate support includes a central region surrounded by an edge region, the central region being raised with respect to the edge region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.