Patent · US Active

Semiconductor device and method of making a semiconductor device

US11011446B2 · kind B2 · utility

0Cited by

3References

6Claims

0Family size

Assignee

Nexperia B.V. · NL

Inventors

Tonny Kamphuis · Lent, NL
Leo van Gemert · Nijmegen, NL
Hans van Rijckevorsel · Ledeacker, NL
Sascha Moeller · Hamburg, DE
Hartmut Buenning · Norderstedt, DE
Steffen Holland · Hamburg, DE
Y Kuang Huang

Key dates

Filing date	Nov 3, 2016
Grant date	May 18, 2021
Priority date	—
Expiry date	Dec 17, 2036

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/37
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, a backside and side surfaces extending between the major surface and the backside. The semiconductor device also includes at least one metal layer extending across the backside of the substrate. A peripheral part of the at least one metal layer located at the edge of the substrate between the backside and at least one of the side surfaces extends towards a plane containing the major surface. This can prevent burrs located at the peripheral part of the at least one metal layer interfering with the mounting of the backside of the substrate on the surface of a carrier.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.