Dielectric helmet-based approaches for back end of line (BEOL) interconnect fabrication and structures resulting therefrom

US11011463B2 · kind B2 · utility

Assignee

• Intel Corporation · US

Inventors

• Kevin Lin · Beaverton, US
• Richard E. Schenker · Portland, US
• Jeffery D. Bielefeld · Forest Grove, US
• Rami Hourani · Santa Clara, US
• Manish Chandhok · Beaverton, US

Key dates

• Filing date: Jul 1, 2016
• Grant date: May 18, 2021
• Expiry date: Jul 1, 2036

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L23/5226
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Dielectric helmet-based approaches for back end of line (BEOL) interconnect fabrication, and the resulting structures, are described. In an example, a semiconductor structure includes a substrate. A plurality of alternating first and second conductive line types is disposed along a same direction of a back end of line (BEOL) metallization layer disposed in an inter-layer dielectric (ILD) layer disposed above the substrate. A dielectric layer is disposed on an uppermost surface of the first conductive line types but not along sidewalls of the first conductive line types, and is disposed along sidewalls of the second conductive line types but not on an uppermost surface of the second conductive line types.